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Gain clamping in double‐pass L‐band EDFA using a ring resonator
Author(s) -
Harun S. W.,
Samsuri N. MD,
Ahmad H.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20509
Subject(s) - optical amplifier , optics , materials science , noise figure , resonator , ring laser , amplifier , microwave , optoelectronics , laser , physics , engineering , telecommunications , cmos
A gain‐clamped long‐wavelength‐band erbium‐doped fiber amplifier (L‐band EDFA) based on a ring‐laser cavity is demonstrated using two C/L‐band wavelength‐selective couplers. This new design provides improved gain characteristics and high tuneability. The gain is clamped at 11.5 dB with a gain variation of less than 0.1 dB from an input‐signal power of −40 to −6 dBm by setting the variable attenuation setting (VOA) at 8 dB. Also, the clamped‐gain level can be controlled to be in the range from 4.7 to 21.3 dB by varying the VOA settings from 0 to 24 dB. However, the proposed gain‐clamped amplifier suffers from noise‐figure degradation, as compared to the open‐ring amplifier, due to the intense ring‐laser light, which counter‐propagates through the EDF. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 484–486, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20509