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New driver for high‐efficiency switching RF power amplifiers
Author(s) -
OrtegaGonzález Francisco Javier
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20472
Subject(s) - amplifier , transistor , electrical engineering , electronic engineering , engineering , rf power amplifier , transistor array , power (physics) , microwave , class (philosophy) , voltage , current sense amplifier , computer science , telecommunications , cmos , operational amplifier , physics , quantum mechanics , artificial intelligence
Abstract This paper describes a new driver circuit for high‐efficiency RF switching power amplifiers (class E, class D) based on a small‐area driver transistor, intrinsic input capacitances of the output‐power transistor, and a shaping network. The driver operation is based on class‐E principles. Among the main benefits of this new driver are high efficiency, very low‐bias voltage, and circuit simplicity. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 370–372, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20472