New driver for high‐efficiency switching RF power amplifiers | Zendy

OrtegaGonzález Francisco Javier | Zendy

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New driver for high‐efficiency switching RF power amplifiers

Author(s) -

OrtegaGonzález Francisco Javier

Publication year - 2004

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.20472

Subject(s) - amplifier , transistor , electrical engineering , electronic engineering , engineering , rf power amplifier , transistor array , power (physics) , microwave , class (philosophy) , voltage , current sense amplifier , computer science , telecommunications , cmos , operational amplifier , physics , quantum mechanics , artificial intelligence

This paper describes a new driver circuit for high‐efficiency RF switching power amplifiers (class E, class D) based on a small‐area driver transistor, intrinsic input capacitances of the output‐power transistor, and a shaping network. The driver operation is based on class‐E principles. Among the main benefits of this new driver are high efficiency, very low‐bias voltage, and circuit simplicity. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 370–372, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20472

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