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Effect of a nipi delta‐doping superlattice on In 1− x Ga x As/In 1− y Al y As amplitude modulator parameters
Author(s) -
Tribuzy C. V.B.,
Pires M. P.,
Souza P. L.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20410
Subject(s) - superlattice , doping , quantum well , materials science , optoelectronics , microwave , chirp , amplitude , optical modulator , polarization (electrochemistry) , optics , physics , chemistry , phase modulation , telecommunications , engineering , laser , phase noise
A theoretical study of the performance of amplitude modulators using a nipi delta‐doping superlattice in InGaAs/InAlAs multiple quantum‐well (QW) structures is presented. The structure is such that an n ‐type delta‐doping layer is placed at the center of the InGaAs QWs and a p ‐type is placed at the center of the InAlAs barriers. From the calculated absorption curves, modulator parameters such as CR, I L , and chirp are estimated and a comparison of the performance of an InGaAs/InAlAs modulator with and without the nipi delta‐doping superlattice is carried out. The study shows that an amplitude modulator containing a nipi delta‐doping superlattice in the InGaAs/InAlAs multiple QW structure presents an improved performance, compared to that without the doping superlattice, as long as the QW composition is adequately chosen. It is shown that for such structures, contrary to the undoped counterpart, it is, in principle, possible to achieve polarization insensitivity and appropriate chirp parameters simultaneously. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 43: 168–173, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20410