Premium
Accurate charge‐control model for analysis of noise properties for AlGaAs/GaAs hemt and AlGaAs/InGaAs phemt at microwave frequencies
Author(s) -
Guru Vandana,
Vyas H. P.,
Gupta Mridula,
Gupta R. S.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20346
Subject(s) - high electron mobility transistor , microwave , charge control , noise (video) , optoelectronics , electrical engineering , gallium arsenide , noise figure , transistor , engineering , electronic engineering , materials science , physics , voltage , power (physics) , telecommunications , computer science , amplifier , cmos , battery (electricity) , quantum mechanics , artificial intelligence , image (mathematics)
An accurate charge‐control approach to analytical noise modeling of a high electron mobility transistor, which provides excellent results in agreement with the experimental data, is presented. The small‐signal parameters, and the drain and gate‐noise sources are calculated to determine the noise coefficients, minimum noise figure F min and minimum noise temperature T min . The influence of drain current, frequency, and device parameters upon F min and T min for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is presented. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 489–494, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20346