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A Ka‐band PHEMT diode double‐balanced star mixer MMIC
Author(s) -
Huang C. W.,
Chang S. J.,
Wu W.,
Wu C. L.,
Chang C. S.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20334
Subject(s) - monolithic microwave integrated circuit , high electron mobility transistor , balun , microwave , optoelectronics , electrical engineering , extremely high frequency , diode , planar , engineering , materials science , transistor , telecommunications , amplifier , cmos , computer science , antenna (radio) , voltage , computer graphics (images)
This paper describes the design and measurement of a double‐balanced monolithic star mixer using a double planar baluns with a Marchand section followed by a coupled‐line structure. The microwave and millimeter‐wave integrated circuits (MMICs) are fabricated on commercially available InGaAs/AlGaAs pseudomorphic high‐electron‐mobility transistor (PHEMT) processes with a chip size of 1.43 × 1.28 mm 2 . The typical up‐conversion loss is 7 dB with an LO‐to‐RF isolation better than 28 dB. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 455–458, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20334