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Modulation bandwidth of semiconductor lasers based on coupled quantum wells
Author(s) -
Wartak M. S.,
Weetman P.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20275
Subject(s) - quantum well , differential gain , bandwidth (computing) , semiconductor , semiconductor laser theory , physics , heterojunction , microwave , optoelectronics , laser , scattering , condensed matter physics , optics , quantum mechanics , telecommunications , engineering
The effect of well coupling on differential gain and maximum‐modulation bandwidth for semiconductor lasers based on coupled quantum wells is analyzed using the K ‐factor method. We determine differential gain in coupled quantum wells within the self‐consistent solution of the Poisson, Schroedinger, and 4 × 4 Luttinger–Kohn equations. The multiple‐body effects of bandgap renormalization, coulombic scattering interactions, and a nonMarkovian distribution are also included. The analysis has been performed for coupled wells at 1.55 μm in an InGaAsP/InP lattice‐matched system grown in the [001] direction. Our results suggest that in order to maximize modulation bandwidth and differential gain, one should design structures with barrier widths larger than 40 Å. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 272–274, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20275
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