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1.57‐μm InP‐based resonant‐cavity‐enhanced photodetector with InP/air‐gap Bragg reflectors
Author(s) -
Ren Xiaomin,
Huang Hui,
Chong Yingzhe,
Huang Yongqing
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20230
Subject(s) - photodetector , optoelectronics , materials science , microwave , resonant cavity , distributed bragg reflector , etching (microfabrication) , optics , bandwidth (computing) , absorption (acoustics) , laser , physics , nanotechnology , telecommunications , engineering , wavelength , layer (electronics) , composite material
We have demonstrated a monolithic and cost‐effective InP‐based resonant‐cavity‐enhanced photodetector with an InP/air‐gap distributed Bragg reflector (DBR) fabricated by using selective wet etching. Peak quantum efficiency is 54% at 1.57 μm, which corresponds to nearly two‐fold enhancement versus a conventional detector of the same absorption depth, a 3‐dB bandwidth of 6.8 GHz was achieved with the active area of 50 × 50 μm 2 . © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 133–135, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20230

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