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A monolithic 1.57/5.25‐GHz concurrent dual‐band low‐noise amplifier using InGaP/GaAs HBT technology
Author(s) -
Lu SheyShi,
Lin YoSheng,
Lee BoWei
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20206
Subject(s) - heterojunction bipolar transistor , cmos , electrical engineering , amplifier , narrowband , noise figure , multi band device , optoelectronics , materials science , microwave , low noise amplifier , transistor , engineering , electronic engineering , antenna (radio) , telecommunications , bipolar junction transistor , voltage
Abstract A monolithic concurrent dual‐band low‐noise amplifier (LNA) using InGaP/GaAs HBT technology is demonstrated for the first time. The LNA provides narrowband gain and matching simultaneously at both 1.57‐GHz (GPS) and 5.25‐GHz (ISM) bands. It consumes only 15‐mW power and achieves transducer gains (S 21 ) of 25.3 and 14.3 dB, input return losses (S 11 ) of 6.8 and 11.5 dB, reverse isolation (S 12 ) of −30.8 and −32.2 dB, and noise figures of 2.55 and 4.5 dB at these two bands, respectively. The performance at 5.25 GHz is comparable with the 2.45/5.25‐GHz concurrent dual‐band CMOS LNA with a bonding wire as the gate inductor using 0.35‐m CMOS technology 1. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 58–60, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20206