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Nonuniform layer model of an image‐guide millimeter‐wave phase shifter
Author(s) -
Fickenscher T.,
Schwolen A.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20180
Subject(s) - phase shift module , extremely high frequency , microwave , materials science , dielectric , phase (matter) , millimeter , optoelectronics , waveguide , optics , excitation , insertion loss , electrical engineering , engineering , telecommunications , physics , quantum mechanics
Optically controllable millimeter‐wave phase shifters in image‐guide technology with rectangular dielectric strips made of semiconductor material are investigated with special regard to the inherent diffusion‐controlled nonuniform plasma‐density distribution due to bandgap‐radiation excitation. This analysis is based on the effective dielectric constant (EDC) method. Numerical examples are presented and discussed, taking single‐moded Si and GaAs image guides at W‐band frequencies into consideration. Furthermore, low‐loss silicon‐on‐quartz sandwich structures are proposed and analysed for use in image‐guide phase shifters. It is clearly observed that phase shifters designed for low loss and high phase shift will require a sandwich structure with a thin plasma layer. The results obtained for the image‐guide phase shifter are compared to those for the dielectric‐waveguide phase shifter. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 486–490, 2004; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/mop.20180