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The attenuation and slow‐wave characteristics of an inverted embedded (IEM) metal‐insulator semiconductor (MIS) microstrip line
Author(s) -
Yin W. Y.,
Dong X. T.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20143
Subject(s) - attenuation , microstrip , materials science , capacitance , semiconductor , inductance , conductivity , conductance , microwave , insulator (electricity) , optoelectronics , electrical engineering , voltage , optics , engineering , physics , electrode , condensed matter physics , telecommunications , quantum mechanics
Abstract The attenuation and slow‐wave characteristics in an inverted embedded metal‐insulator‐semiconductor (IEM‐MIS) microstrip line are investigated in this paper, based on the extracted frequency‐dependent distributed parameters, that is, per‐unit‐length series resistance and inductance, shunt capacitance, and conductance of the structure. Parametric studies are performed to show the combined effects of different parameters, such as strip thickness, width, conductivity, embedding depth, and silicon conductivity and its thickness, on the mode attenuation constant and slow‐wave factor (SWF). © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 366–369, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20143