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A fully integrated dual‐band low‐noise amplifier for bluetooth and wireless LAN applications
Author(s) -
Shouxian Mou,
Jianguo Ma,
Kiat Seng Yeo,
Anh Do Manh
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20121
Subject(s) - bluetooth , electrical engineering , low noise amplifier , multi band device , microwave , amplifier , engineering , cmos , wireless lan , noise (video) , noise figure , wireless , voltage , electronic engineering , telecommunications , computer science , image (mathematics) , artificial intelligence , antenna (radio)
A fully integrated dual‐band low‐noise amplifier (LNA) implemented in a standard 0.18‐μm 1P6M CMOS process is presented in this paper. The LNA draws 12‐mA current from a 1.5‐V voltage supply and achieves power gains of 25 and 10 dB, and noise figures of 3.6 and 4 dB at 2.4 and 5.6 GHz respectively. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 297–301, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20121