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MMIC's characterization by very near‐field technique
Author(s) -
Nativel L.,
Marchetti M.,
Falgayrettes P.,
Castagné M.,
Gasquet D.,
GallBorrut P.,
Castel M.
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.20096
Subject(s) - monolithic microwave integrated circuit , microwave , amplifier , bluetooth , characterization (materials science) , electrical engineering , engineering , cmos , field (mathematics) , electronic engineering , electronic circuit , integrated circuit , optoelectronics , materials science , telecommunications , wireless , nanotechnology , mathematics , pure mathematics
This paper shows a method to characterize microwave circuits using a near‐field scanning microscope. Applied on various samples, it shows good resolution and weak disturbance for ICs operating with very common microwave components. Here, it is applied in an industrial surrounding to characterize the Bluetooth CMOS power amplifier. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 209–213, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20096