Design of an ultra‐low‐noise 1.75‐GHz VCO using InGaP/GaAs HBT technology | Zendy

Jeon Sungwon | Zendy; Lee Sangseol | Zendy

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Design of an ultra‐low‐noise 1.75‐GHz VCO using InGaP/GaAs HBT technology

Author(s) -

Jeon Sungwon,

Lee Sangseol

Publication year - 2004

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.20090

Subject(s) - voltage controlled oscillator , heterojunction bipolar transistor , phase noise , dbc , electrical engineering , microwave , voltage , figure of merit , power consumption , materials science , engineering , optoelectronics , electronic engineering , transistor , power (physics) , physics , telecommunications , bipolar junction transistor , quantum mechanics

An integrated voltage‐controlled oscillator (VCO) operating at 1.75 GHz is designed using the InGaP/GaAs HBT process. The proposed noise‐removal circuit and FR‐4 substrate structure in this paper show an improved characteristic of phase noise and a smaller VCO dimension, respectively. The frequency‐tuning range of the VCO is about 200 MHz and the phase noise at 120‐KHz offset is −119.3 dBc/Hz. The power consumption of the VCO core is 11.2 mW at 2.8‐V supply voltage and the output power is −2 dBm. The calculated figure of merit (FOM) is 191.7, which shows the best performance, as compared with the previous FET or HBT VCOs. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 41: 196–198, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20090

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