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Simulation study of thermal effects in bistable laser diodes
Author(s) -
Madhan M. Ganesh,
Vaya P. R.,
Gunasekaran N.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1405
Subject(s) - bistability , transient (computer programming) , diode , microwave , materials science , current (fluid) , voltage , laser diode , optoelectronics , threshold voltage , laser , thermal , electrical engineering , mechanics , optics , physics , engineering , transistor , computer science , thermodynamics , telecommunications , operating system
The effect of temperature on the hysterisis behavior, threshold current, and threshold voltage of a bistable laser diode are studied by simulating its equivalent electrical circuit, developed from the rate equations. Simulations are carried out using the circuit analysis program PSPICE. The study shows that the forward threshold current, hystersis width, and threshold voltage vary exponentially with temperature. Further, the transient temperature variation in the active region due to pulsed input is also analyzed. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 233–237, 2001.