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Modeling of very high‐frequency effects in the interconnection delays on GaAs‐based VLSICs
Author(s) -
Goel A. K.,
Weitemeyer S. E.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1404
Subject(s) - interconnection , conductor , microwave , capacitance , materials science , substrate (aquarium) , electrical engineering , dispersion (optics) , electronic engineering , optoelectronics , engineering , physics , telecommunications , optics , oceanography , electrode , quantum mechanics , composite material , geology
In this paper, a model of the propagation delays in the interconnection lines on GaAs‐based very high‐speed integrated circuits is presented. The model includes the very high‐frequency effects, such as geometric dispersion, substrate losses, and conductor losses. The model is used to simulate the dependence of interconnect delays on the frequency of operation, interconnect length, width, material resistivity, load capacitance, and the driving source resistance. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 229–233, 2001.