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A microwave HEMT oscillator with a directly coupled port at 4.2 K
Author(s) -
Lee MoonQue
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1386
Subject(s) - microwave , high electron mobility transistor , port (circuit theory) , vackář oscillator , phase noise , electrical engineering , delay line oscillator , electronic oscillator , injection locking , variable frequency oscillator , rc oscillator , local oscillator , pierce oscillator , physics , optoelectronics , voltage controlled oscillator , electronic engineering , engineering , voltage , telecommunications , transistor , optics , laser
An X ‐band HEMT oscillator is designed and tested at the cryogenic temperature of liquid helium. The designed oscillator has a directly coupled port in addition to an output port to obtain circuit simplicity. For the novel oscillator configuration, an analytic design formula of the feedback network is derived. The measured data at cryogenic temperature show a significantly improved phase noise and output power compared to the performance of an oscillator operating at room temperature. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 159–162, 2001.