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Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications
Author(s) -
Goswami Anisha,
Gupta Mridula,
Gupta R. S.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1369
Subject(s) - microwave , mosfet , noise (video) , flicker noise , noise generator , resistive touchscreen , electrical engineering , electronic engineering , equivalent circuit , y factor , optoelectronics , scattering , physics , engineering , materials science , acoustics , noise figure , cmos , transistor , optics , computer science , voltage , telecommunications , amplifier , artificial intelligence , image (mathematics)
A fringing field‐effect‐dependent MOSFET equivalent‐circuit model for its microwave frequency applications has been developed. The thermal noise performance of the device has also been analyzed, including the distributed gate. The equivalent‐current noise source takes into account the thermal noise generated by the resistive and inductive gate, and the results so obtained are compared with experimental/simulated data, and are in close agreement. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 97–105, 2001.