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10 GHz GaAs monolithic twin‐dipole antenna FET mixer
Author(s) -
Meng C. C.,
Deng K. L.,
Lee H. D.,
Lu S. S.,
Wang H.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1337
Subject(s) - mesfet , monolithic microwave integrated circuit , microwave , electrical engineering , optoelectronics , antenna (radio) , materials science , extremely high frequency , engineering , dipole antenna , transistor , voltage , telecommunications , field effect transistor , cmos , amplifier
The first fully monolithic X ‐band twin‐dipole antenna mixer consisting of a uniplanar twin‐dipole antenna and a GaAs MESFET single‐gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated‐circuit technology (MMIC) is reported. The total chip size is 5×5 mm 2 . This circuit received an RF signal of 10 GHz, and down‐converted it to an IF signal of 1 GHz with a conversion loss of 22 dB. The experimental results demonstrate that this topology has potential applications for future low‐cost millimeter‐wave receivers for smart munitions seekers and automotive‐collision‐avoidance radars. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 436–438, 2001.