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On the capacitance and conductance calculations of integrated‐circuit interconnects with thick conductors
Author(s) -
Ymeri Hasan,
Nauwelaers Bart,
Maex Karen
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1307
Subject(s) - capacitance , electrical conductor , conductance , integrated circuit , microwave , dielectric , materials science , electronic engineering , galerkin method , optoelectronics , electrical engineering , physics , computer science , engineering , telecommunications , condensed matter physics , electrode , nonlinear system , quantum mechanics
Abstract In this paper, a method for computing the capacitance and conductance matrices of multiconductor IC interconnects in a multilayered dielectric region is presented. The number of conductors and the number of dielectric layers are arbitrary. The conductors are very thick (as usual for on‐chip interconnects), and can be placed anywhere in the structure. The formulation is obtained by using a semianalytic Green's function of multilayer structures, which is integrated to a series expansion, valid for charge‐density distribution on the conductors. In addition, the quasianalytical evaluation of the entries of the Galerkin matrix leads to a very efficient and accurate computer code. The accuracy of the suggested method is validated by comparing it with the rigorous simulation data obtained from full‐wave solvers and the CAD‐oriented equivalent‐circuit approach. In our research, we have validated the capacitance and conductance matrices of interconnects on lossy silicon substrate over a wide range of frequencies up to 20 GHz. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 335–339, 2001.