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Distributed inductance and resistance per‐unit‐length formulas for VLSI interconnects on silicon substrate
Author(s) -
Ymeri H.,
Nauwelaers B.,
Maex Karen
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1296
Subject(s) - very large scale integration , substrate (aquarium) , inductance , silicon , equivalent series resistance , materials science , electronic engineering , optoelectronics , microwave , computer science , electrical engineering , engineering , telecommunications , oceanography , voltage , geology
A new analytic model is presented (the model is based on the induced current density distribution inside silicon substrate) to calculate the frequency‐dependent distributed inductance and the associated distributed series resistance of silicon semiconducting VLSI interconnects. The validity of the proposed model has been checked by a comparison with CAD‐oriented modeling methodology in conjunction with a quasi‐TEM spectral‐domain approach. It is found that the silicon semiconducting substrate skin effect must be considered for the accurate prediction of the high‐frequency characteristics of VLSI interconnects. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 302–304, 2001.