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Frequency‐dependent behavior of optically illuminated HEMT
Author(s) -
Yajian Huang,
Alphones Arokiaswami
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1245
Subject(s) - high electron mobility transistor , transconductance , microwave , photoconductivity , optoelectronics , signal (programming language) , materials science , current (fluid) , optics , physics , electrical engineering , transistor , voltage , engineering , quantum mechanics , computer science , programming language
An analysis of the ac characteristics of an AlGaAs/GaAs HEMT under illumination with modulated light has been carried out for a small‐signal condition. A new model for the photovoltage calculation is outlined. The effect of the signal frequency on the photoconductive current is evaluated; the results show that the photoconductive current is very small, and can be neglected in the calculation. The frequency dependence of the photovoltage along with the 2‐DEG charge density, drain–source current, and transconductance of the device have been studied analytically for an HEMT structure. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 138–142, 2001.