Premium
Ion‐implanted planar‐gate GaAs MESFET optimized for single‐voltage‐supply operation
Author(s) -
Meng C. C.,
Chen J. W.,
Liu S. J.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1215
Subject(s) - mesfet , planar , materials science , optoelectronics , voltage , microwave , ion , electrical engineering , gallium arsenide , ion implantation , power (physics) , transistor , chemistry , field effect transistor , engineering , physics , computer science , telecommunications , computer graphics (images) , organic chemistry , quantum mechanics
Ion‐implanted planar‐gate power GaAs MESFETs have been optimized for single‐voltage‐supply operation. Recessed gate MESFETs suffer from variations in pinch‐off voltage. The optimized ion‐implanted planar‐gate power GaAs MESFET has an 80 keV 4.2×10 12 /cm 2 Si channel with a 120 keV 1.7×10 12 /cm 2 Be p ‐buffer. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 44–46, 2001.