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Propagation characteristics of Schottky‐contact slow‐wave microstrip line
Author(s) -
Verma A. K.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1173
Subject(s) - microstrip , microwave , dielectric , materials science , schottky barrier , conductor , phase (matter) , propagation constant , line (geometry) , schottky diode , voltage , electronic engineering , electrical engineering , optoelectronics , engineering , physics , mathematics , telecommunications , geometry , composite material , diode , quantum mechanics
The present paper computes the normalized phase constant, dielectric loss, and conductor loss of the voltage‐controlled Schottky‐contact microstrip line using the variational method based on the single‐layer reduction (SLR) formulation. Results computed by the SLR formulation show very good agreement with the experimental results, both in the normalized phase constant and total losses with 2.0% and 0.01 dB/mm, respectively. The present formulation can also handle a greater number of dielectric layers. The model is suitable for the CAD of Schottky‐contact microstrip structures. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 341–344, 2001.