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A new MESFET nonlinear model
Author(s) -
Ooi B. L.,
Ma J. Y.,
Leong M. S.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1139
Subject(s) - mesfet , hyperbolic function , microwave , polynomial , voltage , transistor , nonlinear system , electronic engineering , tangent , electrical engineering , engineering , physics , mathematics , field effect transistor , mathematical analysis , telecommunications , geometry , quantum mechanics
In this paper, a new empirical model for the dc I – V characteristics of a GaAs MESFET transistor is presented. The conventional approach for modeling the dc I – V characteristics of a MESFET transistor adopts the hyperbolic‐tangent dependence on V ds through the observation of the I ds versus V ds curve. The derived model is capable of accurately modeling the device current–voltage behavior in different operation regions. The new model equations describe the device drain current as a polynomial of the effective gate–source voltage V eff , which is in turn a rational function of V gs , and the parameters for the polynomial vary with V ds . Model parameter extraction is made for a 0.5 μm gate‐length MESFET device. Measured and modeled results are compared, and good agreement is obtained. A comparison among the proposed model, Curtice's and Chalmers' model, and Parker's model are also made in this paper. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 226–230, 2001.