Noise model of a reverse‐biased cold‐FET applied to the characterization of its ENR | Zendy

Maya M. C. | Zendy; Lázaro A. | Zendy; Pradell L. | Zendy

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Noise model of a reverse‐biased cold‐FET applied to the characterization of its ENR

Author(s) -

Maya M. C.,

Lázaro A.,

Pradell L.

Publication year - 2004

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.11370

Subject(s) - noise (video) , noise temperature , broadband , microwave , electronic engineering , calibration , y factor , noise measurement , electrical engineering , engineering , noise generator , noise figure , physics , acoustics , computer science , phase noise , noise reduction , telecommunications , cmos , amplifier , quantum mechanics , artificial intelligence , image (mathematics)

This paper presents a broadband‐noise circuit model for a “cold”‐FET ( V ds = 0 V) with a reverse‐biased gate. The noise model includes two intrinsic uncorrelated noise‐current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver‐noise calibration. Experimental results up to 40 GHz are given. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 326–330, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11370

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