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An integrated electro‐optic E‐field sensor with segmented electrodes
Author(s) -
Fuwen Zhang,
Fushen Chen,
Kun Qiu
Publication year - 2004
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11361
Subject(s) - microwave , sensitivity (control systems) , diode , interferometry , mach–zehnder interferometer , electrode , materials science , laser diode , voltage , optoelectronics , optics , biasing , bandwidth (computing) , electrical engineering , physics , electronic engineering , engineering , telecommunications , quantum mechanics
An integrated electro‐optical E‐field sensor using a proton‐exchanged LiNbO 3 Mach–Zehnder (M–Z) interferometer with a combined antenna and modulator electrode structure is designed and fabricated to improve the sensitivity and bandwidth of the device. The experimental results show that the minimum detectable voltage is 0.22 mV at 900 MHz and the laser diode has a 5.6‐mA bias current. Variation of the sensitivity with the frequency is analyzed using the method of moments (MoM), and the calculated results basically agree with the measured results. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 302–305, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11361