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Improved predistorter for GaAs FET power amplifier
Author(s) -
Lo Wai Keung,
Chan Wing Shing,
Li Chung Wai
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11331
Subject(s) - varicap , amplifier , microwave , electrical engineering , capacitance , diode , resistor , electronic engineering , engineering , linearization , fet amplifier , flexibility (engineering) , optoelectronics , materials science , cmos , physics , telecommunications , rf power amplifier , nonlinear system , voltage , mathematics , statistics , electrode , quantum mechanics
Abstract Linearization of the gate‐source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 211–213, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11331