Improved predistorter for GaAs FET power amplifier | Zendy

Lo Wai Keung | Zendy; Chan Wing Shing | Zendy; Li Chung Wai | Zendy

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Improved predistorter for GaAs FET power amplifier

Author(s) -

Lo Wai Keung,

Chan Wing Shing,

Li Chung Wai

Publication year - 2003

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.11331

Subject(s) - varicap , amplifier , microwave , electrical engineering , capacitance , diode , resistor , electronic engineering , engineering , linearization , fet amplifier , flexibility (engineering) , optoelectronics , materials science , cmos , physics , telecommunications , rf power amplifier , nonlinear system , voltage , mathematics , statistics , electrode , quantum mechanics

Linearization of the gate‐source capacitance in a GaAs FET, realized by using a varactor diode, tends to offer limited improvement. This paper presents a method to allow more flexibility due to the addition of a resistor in series with the linearizing varactor diode. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 211–213, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11331

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