Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by p +  substrate | Zendy

Meng C. C. | Zendy

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Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by p + substrate

Author(s) -

Meng C. C.

Publication year - 2003

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.11326

Subject(s) - substrate (aquarium) , transit time , enhanced data rates for gsm evolution , microwave , optoelectronics , materials science , burn out , instability , electrical engineering , physics , engineering , telecommunications , medicine , clinical psychology , oceanography , transport engineering , mechanics , geology

The p + substrate plays an important role on the edge stability of p + n multiquantum well avalanche transit time devices. The p + n multiquantum well avalanche transit time devices on n + substrate easily burn out along the device edge at low breakdown current. The same structure on p + substrate can have the desired band diagram on device edge to eliminate edge burn‐out and CW operation is thus achieved at 100.3 GHz. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 196–197, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11326

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