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Edge instability elimination of GaAs/ALGaAs MQW avalanche transit time oscillators by p + substrate
Author(s) -
Meng C. C.
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11326
Subject(s) - substrate (aquarium) , transit time , enhanced data rates for gsm evolution , microwave , optoelectronics , materials science , burn out , instability , electrical engineering , physics , engineering , telecommunications , medicine , clinical psychology , oceanography , transport engineering , mechanics , geology
The p + substrate plays an important role on the edge stability of p + n multiquantum well avalanche transit time devices. The p + n multiquantum well avalanche transit time devices on n + substrate easily burn out along the device edge at low breakdown current. The same structure on p + substrate can have the desired band diagram on device edge to eliminate edge burn‐out and CW operation is thus achieved at 100.3 GHz. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 196–197, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11326