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High‐efficiency class‐C power‐amplifier module
Author(s) -
Song KiJae,
Lee JongChul,
Lee Byungje,
Kim JongHeon,
Kim NamYoung
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11317
Subject(s) - ldmos , amplifier , electrical engineering , engineering , power (physics) , harmonic , electronic engineering , power added efficiency , rf power amplifier , microwave , spice , transmission line , transistor , voltage , telecommunications , physics , acoustics , cmos , quantum mechanics
This paper presents the design of a high‐efficiency LDMOS power‐amplifier module (PAM) at the 880‐MHz band. The nonlinear parameters for the LDMOS FET are obtained through the modified SPICE level‐3 static and large‐signal analyses. It shows an output power of 30.2 dBm and power‐added efficiency (PAE) of 64%, with a transducer power gain of 28.78 dB. In this paper, the harmonic‐trap network (HTN) is introduced to maximize the PAE and the winding transmission line (WTL) is adopted to obtain the optimizing output matching point between the output power and PAE. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 164–167, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11317