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Effect of device gain compression on V‐band pHEMT mixer performance
Author(s) -
Brabetz T.,
Buchanan N. B.,
Fusco V. F.
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11249
Subject(s) - high electron mobility transistor , microwave , gain compression , materials science , optoelectronics , electrical engineering , compression (physics) , electronic engineering , high gain antenna , engineering , telecommunications , transistor , composite material , amplifier , cmos , voltage
An examination of conversion gain compression impact on mixer performance at 65 GHz demonstrates that the compression properties of upconverters are inherently worse than those of downconverters, and that narrow‐gate devices (when used in downconverters) and wide‐gate devices (when used in upconverters) yield the best conversion‐gain performance characteristics. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 468–469, 2003