A new instantaneous model of MESFET and HEMT devices for large‐signal circuit design | Zendy

Cicolani Maurizio | Zendy; Di Martino Alberto | Zendy; D'Innocenzo Silvio | Zendy; Pisa Stefano | Zendy; Tommasino Pasquale | Zendy; Trifiletti Alessandro | Zendy

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A new instantaneous model of MESFET and HEMT devices for large‐signal circuit design

Author(s) -

Cicolani Maurizio,

Di Martino Alberto,

D'Innocenzo Silvio,

Pisa Stefano,

Tommasino Pasquale,

Trifiletti Alessandro

Publication year - 2001

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.1124

Subject(s) - mesfet , high electron mobility transistor , amplifier , microwave , large signal model , electronic engineering , engineering , nonlinear system , electrical engineering , voltage , small signal model , signal (programming language) , nonlinear element , power (physics) , transistor , physics , computer science , telecommunications , field effect transistor , programming language , cmos , quantum mechanics

A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an X ‐band hybrid amplifier. Excellent agreement between measurements and simulated performance in small‐signal and nonlinear power characteristics has been obtained. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 187–190, 2001.

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