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A new instantaneous model of MESFET and HEMT devices for large‐signal circuit design
Author(s) -
Cicolani Maurizio,
Di Martino Alberto,
D'Innocenzo Silvio,
Pisa Stefano,
Tommasino Pasquale,
Trifiletti Alessandro
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1124
Subject(s) - mesfet , high electron mobility transistor , amplifier , microwave , large signal model , electronic engineering , engineering , nonlinear system , electrical engineering , voltage , small signal model , signal (programming language) , nonlinear element , power (physics) , transistor , physics , computer science , telecommunications , field effect transistor , programming language , cmos , quantum mechanics
Abstract A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an X ‐band hybrid amplifier. Excellent agreement between measurements and simulated performance in small‐signal and nonlinear power characteristics has been obtained. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 187–190, 2001.