A new instantaneous model of MESFET and HEMT devices for large‐signal circuit design

A nonlinear lumped‐element model of MESFET and HEMT devices whose parameters are empirical functions of instantaneous voltages at the controlling internal nodes has been developed and used to design an X ‐band hybrid amplifier. Excellent agreement between measurements and simulated performance in small‐signal and nonlinear power characteristics has been obtained. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 187–190, 2001.