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A 52 GHz VCO with low‐phase noise implemented in SiGe BiCMOS technology
Author(s) -
Jia Lin,
Ma JianGuo,
Cabuk Alper,
Yeo Kiat Seng,
Do Manh Anh
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11235
Subject(s) - voltage controlled oscillator , phase noise , parasitic extraction , dbc , electrical engineering , silicon germanium , bicmos , microwave , heterojunction bipolar transistor , engineering , electronic engineering , transistor , bipolar junction transistor , voltage , materials science , optoelectronics , telecommunications , silicon
A fully integrated 52‐GHz millimeter‐wave LC voltage‐controlled oscillator (VCO) with −106 dBc/Hz phase noise at 600‐kHz offset frequency and 0.93‐GHz tuning range is reported in this paper using IBM BiCMOS‐6HP technology. The output voltage swing of the VCO is about 0.4 Vp‐p for the complementary cross‐coupled topology with a buffer. A bipolar device is used as the tail transistor to constantly supply a current in order to preserve the oscillation of the VCO. The parasitics due to the interconnected metals are extracted from the layout, and the effects of those parasitics on the VCO's performance are investigated. Based on these analyses, an optimized layout of the complementary VCO is obtained, and the pre‐layout and post‐layout simulations are compared and presented. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 414–418, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11235