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RF parameter extraction of MMIC nichrome resistors
Author(s) -
Sharma Renu,
Vinayak Seema,
Rawal D. S.,
Kumar Ashok,
Ray U. C.
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11233
Subject(s) - nichrome , resistor , monolithic microwave integrated circuit , microwave , materials science , electrical engineering , equivalent circuit , electronic engineering , engineering , substrate (aquarium) , optoelectronics , telecommunications , composite material , voltage , amplifier , cmos , oceanography , geology
The lumped‐element electrical equivalent circuit of nichrome (NiCr) resistors is important for monolithic microwave integrated circuit (MMIC) design. This paper presents a methodology for the RF parameter extraction of thin‐film NiCr resistors fabricated on GaAs substrate. An algorithm based on DUT S parameters has been developed to extract the electrical parameters of the equivalent circuit up to 18 GHz for a large number of resistors of varying geometries and geometry‐scaleable curve‐fitted equations for the model parameters have been obtained. The computed S parameters, based on the extracted model parameters, agree reasonably well with the measured S parameters. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 409–412, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11233