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Single‐voltage‐supply operation of Ga 0.51 In 0.49 P/AlGaAS/IN 0.15 Ga 0.85 As PHEMTS with high‐power density
Author(s) -
Tu HsingYuan,
Pan HsuanYu,
Lu SheyShi
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11167
Subject(s) - high electron mobility transistor , dbm , electrical engineering , materials science , microwave , voltage , power (physics) , optoelectronics , power density , transistor , engineering , physics , telecommunications , amplifier , cmos , quantum mechanics
A Ga 0.51 In 0.49 P/AlGaAs/In 0.15 Ga 0.85 As PHEMT with the highest power density among all single‐voltage‐supply operated devices, to our knowledge, was demonstrated for the first time. Operating at 1.8‐GHz under class‐A bias conditions, this FET shows 18.84‐dBm (382.8 mW/mm) saturated power and 17.25‐dBm (265.4 mW/mm) P 1dB when the drain voltage is 3.6 V. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 196–199, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11167