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Accurate computer‐aided modeling of multilayer GaAs microstrip lines using a spectral‐domain method
Author(s) -
Thakur Jay Prakash,
Kedar Ashutosh,
Gupta K. K.,
Pandey A. K.,
Vyas H. P.
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11156
Subject(s) - microstrip , monolithic microwave integrated circuit , microwave , dielectric , cad , characteristic impedance , electrical impedance , electronic engineering , materials science , line (geometry) , range (aeronautics) , engineering , optoelectronics , electrical engineering , telecommunications , mathematics , engineering drawing , amplifier , geometry , cmos , composite material
Multilayer microstrip lines are an integral part of MMIC. This paper presents an analysis of multilayer GaAs microstrip lines using a spectral‐domain method (SDM), taking into account the effect of the variation in the thickness of various layers of substrates on the characteristic impedance and the effective dielectric constant of the line. Some of the theoretical results are validated by the measured results on three‐layer GaAs microstrip lines, showing a close agreement within a 1% deviation over a large frequency range up to 20 GHz. The proposed CAD model is expected to provide an economical and fast CAD procedure for GaAs‐MMIC foundries. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 159–162, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11156