Using a low‐voltage intermodulation distortion sweet‐spot for controlling gain in HEMT amplifiers | Zendy

Malaver Emigdio | Zendy; García José Ángel | Zendy; Tazón Antonio | Zendy; Mediavilla Angel | Zendy

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Using a low‐voltage intermodulation distortion sweet‐spot for controlling gain in HEMT amplifiers

Author(s) -

Malaver Emigdio,

García José Ángel,

Tazón Antonio,

Mediavilla Angel

Publication year - 2003

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.11129

Subject(s) - intermodulation , high electron mobility transistor , linearity , amplifier , transconductance , microwave , electrical engineering , biasing , electronic engineering , distortion (music) , voltage , engineering , automatic gain control , low voltage , telecommunications , transistor , cmos

In this paper, a low‐voltage high‐linearity sweet‐spot, associated with an adjustable transconductance, is proposed for implementing a simple and highly linear HEMT‐based gain control strategy. The proposed approach, based on a selective gate and drain biasing technique, is compared with the conventional solution under two‐tone and multitone excitations. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 67–70, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11129

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