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Using a low‐voltage intermodulation distortion sweet‐spot for controlling gain in HEMT amplifiers
Author(s) -
Malaver Emigdio,
García José Ángel,
Tazón Antonio,
Mediavilla Angel
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11129
Subject(s) - intermodulation , high electron mobility transistor , linearity , amplifier , transconductance , microwave , electrical engineering , biasing , electronic engineering , distortion (music) , voltage , engineering , automatic gain control , low voltage , telecommunications , transistor , cmos
In this paper, a low‐voltage high‐linearity sweet‐spot, associated with an adjustable transconductance, is proposed for implementing a simple and highly linear HEMT‐based gain control strategy. The proposed approach, based on a selective gate and drain biasing technique, is compared with the conventional solution under two‐tone and multitone excitations. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 39: 67–70, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11129