A simple approach towards the design and optimization of a C‐band injection‐locked amplifier

In this paper, a simple design and optimization approach for a C‐band injection‐locked amplifier using a FET dielectric resonator oscillator is presented. Considerations such as frequency stability, mechanical tuning, repeatability, and low cost led to the choice of a dielectric resonator oscillator (DRO) as the injection‐locked amplifier (ILA). Here the heights of the DR and the spacer are experimentally optimized to obtain wider tunability (≈4.9%) with a power flatness of ±1 dB at power output levels of +30 dBm. The simplicity of the design approach is outlined and optimization technique discussed. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 488–491, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11098