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A simple approach towards the design and optimization of a C‐band injection‐locked amplifier
Author(s) -
Chakravarty T.,
Kumar Arun,
Basu A. K.
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11098
Subject(s) - flatness (cosmology) , amplifier , dielectric resonator , resonator , microwave , electronic engineering , engineering , electrical engineering , materials science , physics , telecommunications , cmos , cosmology , quantum mechanics
In this paper, a simple design and optimization approach for a C‐band injection‐locked amplifier using a FET dielectric resonator oscillator is presented. Considerations such as frequency stability, mechanical tuning, repeatability, and low cost led to the choice of a dielectric resonator oscillator (DRO) as the injection‐locked amplifier (ILA). Here the heights of the DR and the spacer are experimentally optimized to obtain wider tunability (≈4.9%) with a power flatness of ±1 dB at power output levels of +30 dBm. The simplicity of the design approach is outlined and optimization technique discussed. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 488–491, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11098