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A Ka‐band LTCC integrated 22‐dBm MMIC power‐amplifier module
Author(s) -
Kim Dae Jun,
Yoon Kyung Sik,
Park Chul Soon
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11088
Subject(s) - monolithic microwave integrated circuit , amplifier , electrical engineering , high electron mobility transistor , engineering , dbm , microwave , ka band , power (physics) , linear amplifier , rf power amplifier , electronic engineering , materials science , transistor , telecommunications , physics , cmos , voltage , quantum mechanics
This paper describes the design and fabrication of a 0.7‐mm‐thick compact Ka‐band low‐temperature co‐fired ceramic (LTCC) power‐amplifier module, integrating the 0.25‐μm PHEMT MMIC power‐amplifier design. The LTCC module, designed for a surface‐mounting structure, and composed of a five‐layer LTCC circuit with internal matching networks. The power‐amplifier module reveals 24‐dBm output power and 8‐dB power gain between 28 and 31 GHz, which is equivalent to less than 1 dB loss compared to the MMIC's performance. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 455–457, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11088
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