Premium
Parameter extraction of a base‐collector equivalent circuit model for SiGe heterojunction bipolar transistors
Author(s) -
Lee Seonghearn
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11067
Subject(s) - heterojunction bipolar transistor , bipolar junction transistor , heterostructure emitter bipolar transistor , heterojunction , equivalent circuit , microwave , optoelectronics , base (topology) , extraction (chemistry) , materials science , electronic engineering , transistor , electrical engineering , engineering , computational physics , physics , mathematics , chemistry , voltage , telecommunications , mathematical analysis , chromatography
By deriving new Z ‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured S parameters, without any test structure and geometric calculation. The calculated power and current gains are in good agreement with the measured gains, thus verifying the accuracy of the extraction. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 384–387, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11067