Parameter extraction of a base‐collector equivalent circuit model for SiGe heterojunction bipolar transistors | Zendy

Lee Seonghearn | Zendy

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Parameter extraction of a base‐collector equivalent circuit model for SiGe heterojunction bipolar transistors

Author(s) -

Lee Seonghearn

Publication year - 2003

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.11067

Subject(s) - heterojunction bipolar transistor , bipolar junction transistor , heterostructure emitter bipolar transistor , heterojunction , equivalent circuit , microwave , optoelectronics , base (topology) , extraction (chemistry) , materials science , electronic engineering , transistor , electrical engineering , engineering , computational physics , physics , mathematics , chemistry , voltage , telecommunications , mathematical analysis , chromatography

By deriving new Z ‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured S parameters, without any test structure and geometric calculation. The calculated power and current gains are in good agreement with the measured gains, thus verifying the accuracy of the extraction. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 384–387, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11067

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