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Parasitic resistance and polarization‐dependent polynomial‐based non‐linear analytical charge‐control model for AlGaN/GaN MODFET for microwave frequency applications
Author(s) -
Korwal Manju,
Haldar S.,
Gupta Mridula,
Gupta R. S.
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11064
Subject(s) - transconductance , charge control , high electron mobility transistor , microwave , cutoff frequency , heterojunction , materials science , optoelectronics , conductance , condensed matter physics , physics , voltage , electrical engineering , transistor , engineering , power (physics) , battery (electricity) , quantum mechanics
A simple and compact non‐linear analytical charge control model for the Al m Ga 1 − m N/GaN MODFET is developed. This model incorporates the effect of parasitic resistances R s and R d , fermi potential ( E F )‐variation with sheet‐carrier concentration n s , and the charge induced in 2D electron gases (2‐DEG) due to the highly dominant effects of spontaneous and piezoelectric polarization at the heterojunction of the MODFET. Extrinsic current‐voltage characteristics show good agreement with experimental data and closed‐form expressions for transconductance, drain conductance, and unit current‐gain cutoff frequency are obtained. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 371–378, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11064