Premium
Advanced modeling of semiconductor lasers based on quantum Boltzmann equations
Author(s) -
Wartak M. S.,
Weetman P.
Publication year - 2003
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.11063
Subject(s) - boltzmann constant , microwave , laser , semiconductor laser theory , semiconductor , quantum well , physics , statistical physics , quantum , diffusion , boltzmann equation , power (physics) , computational physics , electronic engineering , quantum mechanics , engineering
In this paper, we briefly describe the development of an advanced model of semiconductor lasers. Wigner functions and quantum Boltzmann equations were used to formulate the model. Our aim is to improve upon the presently used drift‐diffusion‐based models. Basic laser characteristics, such as power spectrum and current across the structure of a single quantum well, have been determined. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 369–371, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11063