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A novel extraction method for the higher order components of channel current in a GaAs MESFET
Author(s) -
Kim Youngsik,
Yi Jaehyok,
Yang Youngoo,
Kim Bumman
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1101
Subject(s) - mesfet , intermodulation , volterra series , electronic engineering , microwave , electrical impedance , harmonic , nonlinear system , channel (broadcasting) , current (fluid) , series (stratigraphy) , engineering , electrical engineering , physics , acoustics , telecommunications , voltage , transistor , field effect transistor , amplifier , paleontology , cmos , quantum mechanics , biology
A novel extractionion method has been proposed for direct extract of the higher order Taylor coefficients of the channel current I ds ( V gs , V ds ) in a GaAs MESFET. Low‐frequency (45 and 70 MHz) two‐tone signals are employed to measure the harmonic component, and the load impedance was properly designed to find the cross terms. A Volterra series analysis is used for the formulation of Taylor series coefficients of the nonlinear channel current. This proposed parameter extraction procedure is simple and straightforward. The extracted current model is utilized successfully for intermodulation analysis. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 114–117, 2001.