Extraction of an avalanche diode noise model for its application as an on‐wafer noise source | Zendy

Maya M. C. | Zendy; Lázaro A. | Zendy; Pradell L. | Zendy

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Extraction of an avalanche diode noise model for its application as an on‐wafer noise source

Author(s) -

Maya M. C.,

Lázaro A.,

Pradell L.

Publication year - 2003

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.10979

Subject(s) - noise (video) , noise figure meter , noise generator , broadband , wafer , microwave , noise measurement , electronic engineering , noise temperature , reflection coefficient , noise figure , electrical engineering , acoustics , engineering , physics , optics , phase noise , computer science , noise reduction , telecommunications , cmos , amplifier , artificial intelligence , image (mathematics)

This paper presents a method to characterize the excess noise ratio (ENR) of an unmatched avalanche noise diode for application as an on‐wafer noise source. It is based on the determination of a broadband device noise circuit‐model from its measured reflection coefficient and noise powers. Measured ENR is used to calibrated a noise receiver up to 40 GHz. © 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 38: 89–92, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10979

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