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Carrier‐concentration‐dependent low‐field‐mobility model for InAlAs/InGaAs/InP lattice‐matched HEMT for microwave application
Author(s) -
Jogi Jyotika,
Sen Sujata,
Gupta Mridula,
Gupta R. S.
Publication year - 2001
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.1085
Subject(s) - transconductance , high electron mobility transistor , microwave , cutoff frequency , materials science , optoelectronics , subthreshold conduction , electron mobility , indium phosphide , field effect transistor , gallium arsenide , voltage , condensed matter physics , electrical engineering , transistor , physics , engineering , quantum mechanics
A carrier‐concentration‐dependent low‐field‐mobility model for a lattice‐matched InAlAs/InGaAs/InP HEMT for microwave frequency applications is developed. The dependence of mobility on carrier concentration affects the current–voltage characteristics, and also the gate–voltage dependence of transconductance. An approximation for the two‐dimensional electron gas (2‐DEG) concentration versus the gate‐to‐channel voltage, which models both the subthreshold region and the gradual saturation of carriers, due to the onset of charge modulation, has been used. The model also evaluates the cutoff frequency as a function of gate length, and a value of 203 GHz is obtained. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 29: 66–70, 2001.