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Broadband characteristics of a parallel diode linearized amplifier
Author(s) -
Mok Ka Tsun,
Chan Wing Shing,
Leung Chun Kai,
Yu Chi Sun,
Li Chung Wai
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10680
Subject(s) - broadband , amplifier , microwave , diode , electrical engineering , transistor , optoelectronics , engineering , electronic engineering , physics , telecommunications , cmos , voltage
Abstract A compact broadband linearized amplifier, using a parallel‐configured diode connected directly to the base of the transistor, is proposed. It has shown a reduction in spectral re‐growth of 8–20 dB for the first sidelobe in the frequency range of 0.8–2 GHz. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 82–83, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10680