Broadband characteristics of a parallel diode linearized amplifier | Zendy

Mok Ka Tsun | Zendy; Chan Wing Shing | Zendy; Leung Chun Kai | Zendy; Yu Chi Sun | Zendy; Li Chung Wai | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Broadband characteristics of a parallel diode linearized amplifier

Author(s) -

Mok Ka Tsun,

Chan Wing Shing,

Leung Chun Kai,

Yu Chi Sun,

Li Chung Wai

Publication year - 2002

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.10680

Subject(s) - broadband , amplifier , microwave , diode , electrical engineering , transistor , optoelectronics , engineering , electronic engineering , physics , telecommunications , cmos , voltage

A compact broadband linearized amplifier, using a parallel‐configured diode connected directly to the base of the transistor, is proposed. It has shown a reduction in spectral re‐growth of 8–20 dB for the first sidelobe in the frequency range of 0.8–2 GHz. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 36: 82–83, 2003; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10680

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research