Calculated gain and threshold current density for interconduction‐subband transition in Si triple‐quantum‐well‐structures | Zendy

Ghosh Sumitra | Zendy; Mukhopadhyay Bratati | Zendy; Basu P. K. | Zendy

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Calculated gain and threshold current density for interconduction‐subband transition in Si triple‐quantum‐well‐structures

Author(s) -

Ghosh Sumitra,

Mukhopadhyay Bratati,

Basu P. K.

Publication year - 2002

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.10641

Subject(s) - population inversion , microwave , quantum tunnelling , condensed matter physics , phonon , radiative transfer , physics , atomic physics , quantum mechanics , laser

We have theoretically demonstrated population inversion between two conduction subbands in a silicon quantum well in a triple‐well structure with Si and SiGe, considering tunneling, radiative‐ and non‐radiative‐acoustic, and g ‐phonon transitions. The gain spectra are then calculated and threshold current densities are estimated. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 470–475, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10641

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