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Model device parameters for a 10‐Gb/s HEMT modulator driver IC
Author(s) -
Jianjun Gao,
Baoxin Gao,
Bo Pan,
Chunguang Liang
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10606
Subject(s) - high electron mobility transistor , microwave , electrical engineering , capacitance , engineering , transistor , electronic engineering , optoelectronics , materials science , physics , telecommunications , voltage , electrode , quantum mechanics
This paper presents research on device parameters for a 2.5–10‐Gb/s high electron mobility transistor (HEMT) modulator driver IC. The effect of DC and capacitance parameters on the driver IC is discussed, and their ability to meet the requirements of the driver IC are calculated. The results shown agree with experimental data. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 357–360, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10606