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On the design of polarization‐insensitive semiconductor optical amplifiers
Author(s) -
Wartak M. S.,
Weetman P.
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10564
Subject(s) - semiconductor , microwave , amplifier , polarization (electrochemistry) , optoelectronics , hamiltonian (control theory) , optical amplifier , lattice (music) , physics , materials science , condensed matter physics , optics , chemistry , quantum mechanics , mathematics , mathematical optimization , laser , cmos , acoustics
We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 227–230, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10564
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