Neural network based time domain modelling of 0.18 μm MOSFETs | Zendy

Toner B. | Zendy; Alam M. S. | Zendy; Fusco V. F. | Zendy; Armstrong G. A. | Zendy

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Neural network based time domain modelling of 0.18 μm MOSFETs

Author(s) -

Toner B.,

Alam M. S.,

Fusco V. F.,

Armstrong G. A.

Publication year - 2002

Publication title -

microwave and optical technology letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.304

H-Index - 76

eISSN - 1098-2760

pISSN - 0895-2477

DOI - 10.1002/mop.10558

Subject(s) - time domain , mosfet , artificial neural network , waveform , electronic engineering , microwave , signal (programming language) , transistor , electrical engineering , voltage , engineering , computer science , telecommunications , artificial intelligence , computer vision , programming language

In this paper a new time domain based neural network model of a 0.18 μm RF MOSFET will be demonstrated. The model consists of only three intrinsic non‐linear current sources, each being modelled by a neural network derived from large signal time domain voltage/current waveform measurements at the intrinsic device terminals. This approach negates the traditional method of multi‐bias S ‐parameter measurement providing a fast and accurate method of modelling the transistor under large signal conditions. Full verification of the model will be provided against an 80 μm/0.18 μm MOSFET operating at 2.4 GHz. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 203–206, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10558

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