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GaAs MESFET rf I‐V curve through unique determination of small‐signal circuit parameters from measured S parameters
Author(s) -
Meng C. C.,
Huang G. H.
Publication year - 2002
Publication title -
microwave and optical technology letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.304
H-Index - 76
eISSN - 1098-2760
pISSN - 0895-2477
DOI - 10.1002/mop.10483
Subject(s) - mesfet , microwave , radio frequency , signal (programming language) , small signal model , electrical engineering , large signal model , electronic engineering , materials science , engineering , physics , transistor , telecommunications , computer science , voltage , power (physics) , field effect transistor , programming language , quantum mechanics
Abstract A method to uniquely determine each small signal circuit element from measured S parameters is used to obtain the rf I‐V curve for uniform‐doped MESFETs. No dc measurement is needed in this method. The resulting rf I‐V curve differs from the static dc I‐V curve and is useful to predict rf performance. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 34: 426–427, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10483